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Journal of Nanoelectronic Devices
JND 2019, 1(1), 16-19
Investigation of conductivity properties of Hollow Carbon Nanospheres by STM and Scanning Tunneling Spectroscopy technique
Department of Physics, Faculty of Sciences, University of Guilan, Rasht, Iran
Reactor and Nuclear Safety Research School, Nuclear Science and Technology Research Institute, P.O. Box 81465/1589, Isfahan, Iran
ran Polymer and Petrochemical Institute, Tehran, Iran
ABSTRACT
The electronic and conductivity properties of hollow carbon nanospheres (HCNSs) were investigated in this work via scanning tunnelling microscopy (STM) and scanning tunnelling spectroscopy (STS) technique. Study and estimation of the Quantum behaviour and differential conductance (dI/dV) measurements of HCNSs was the most important task. The hollow carbon nanospheres used herein are synthesized by chemical vapour deposition (CVD) method from HgO/C nanocomposite with core-shell structures. the local currents images on the surface of HCNSs was recorded by STM and to measure the differential conductance by STS technique, Perform a current-voltage sweep (I-V curve) and take the mathematical derivative was used. The Differential conductance measurements of the synthesized hollow carbon nanospheres from CVD method was carried out using an improved method. The HCNSs I-V curve follows from the quantum behaviour and it was observed that the HCNSs has a good conductivity for many applications such as electronic devices and electrode materials.